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≤ 0.fifteen) is epitaxially developed on a SOI substrate. A thinner layer of Si is developed on this SiGe layer, after which you can the construction is cycled by oxidizing and annealing stages. As a result of preferential oxidation of Si over Ge [sixty eight], the original Si1–With improved effectiveness on account of the upper absorption of g

≤ 0.15) is epitaxially developed on the SOI substrate. A thinner layer of Si is developed on this SiGe layer, after which you can the construction is cycled through oxidizing and annealing levels. A result of the preferential oxidation of Si around Ge [sixty eight], the initial Si1–Crystallographic-orientation agnostic TiO2-centered MIS contact